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| Contact |
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Ellert Christoph |
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| Title |
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Influence of Raman crystallinity on the performance of micromorph thin film silicon solar cells |
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| Author(s) |
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Ellert Ch., Wachtendorf C., Hedler A., Klindworth M., Martinek M. |
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| References |
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Solar Energy Materials & Solar Cells, Volume 96, 2012, pp. 71-76 |
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| Url |
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http://www.sciencedirect.com/science/article/pii/S0927024811005034 |
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| Abstract |
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The performance of micromorph silicon tandem solar cells deposited by plasma enhanced chemical vapor deposition(PECVD)at 40MHz was investigated in a large area industrially employed reactor as a function of the crystalline fraction of the microcrystalline bottom cell. There levant plasma parameters frequency, pressure, hydrogen and silane mixture, temperature were kept constant. The RF-powerfor the deposition of the bottom cell was varied in order to scan its Raman crystalline fraction over the transition region from amorphous into highly crystalline. Assuming constant amorphousor micro-crystalline material quality (in terms of stability and defect density) the optimum value of the Raman crystalline fraction and especially the width of the optimum range was thus determined quantitatively. It is shown that the optimum Raman crystalline fraction of the bottom cell on substrates with front contact and amorphous top cellis 52% + 10%. A clear decrease of short circuit current density is observed for too high crystalline fraction. |
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